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From Micro to Nanoelectronics

COURSE: From Micro to Nanoelectronics

Code: ФЕИТ05011

ECTS points: 6 ECTS

Number of classes per week: 3+0+0+3

Lecturer: prof. Katerina Raleva

Subject of the course content: State-of-the-art in Si transistor technology in the context of Moore’s law. Scaling MOSFET transistor. Short channel MOSFET (phenomena specific to deep submicron devices: mobility degradation, threshold voltage roll off, saturation velocity, quantum effects: confinement and tunnelling, ballistic limit). Ultimate CMOS technologies and their showstoppers - innovative device architectures (Double-gate MOS transistor -DGMOS, FinFET, gate-all-around transistor - GAA). Nano-scale and quantum devices: Single Electron Transistor (SET), Nanowire Transistors, Carbon Nanotube Transistor (CNT), ReRAM. Simulation tools for micro- and nanoelectronic devices.


  1. Jan M. Rabaey, Anantha Chandrakasan, and Borivoje Nikolic, “Digital Integrated Circuits: A Design Perspective (2nd Edition)”, Prentice Hall, 2005.
  2. R. F. Pierret , “Field Effect Devices”, Prentice Hall (Volume 4 on Modular Series on Solid State Devices), 2001.
  3. Konstantin K. Likharev, “Single Electron Devices and Their Applications (a review paper)”, Proc. IEEE, vol. 87, pp. 606-632, 1999.